voltage: 20- 40 volts current: 0.5 amp CDBW0520 - cdbw0540 feature low turn-on voltage fast switching pn junction guard ring for transient and esd protection mechanical data case: sod-123, molded plastic t erminals: solderable per mil-std-750, method 2026 polarity: indicated by cathode band mounting position: any weight:0.008 grams smd schottky barrier diodes smd schottky barrier diodes www.com chip.co m.tw c o m c h ip c o m c h ip parameter max.repetitivepeak reverse v oltage max. dc blocking voltage max. rms v oltage peak surge forward current 8.3ms single half sine-wave sine-wave superimposed on rate load ( jedec ) max. averageforward current max. forward current at 0.1 a 0.5 a max. reverse current max. thermal resistanceoperating junction temperature storage temperature symbol v rrm v dc v rms i fsm i o v f i r r ja r jl t j t stg CDBW0520 20 14 20 0.3 0.385 0.075 @ v r =10v 0.25 @ v r =20v maximum ratings and electrical characterics unit v v v a a v ma cdbw0530 30 21 30 5.5 0.5 0.375 0.430 0.02 @ v r =15v 0.13 @ v r =30v cdbw0540 40 28 40 0.51 0.01@ v r =20v 0.02 @ v r =40v .154 (3. 90) .016 (.4 0)m in. .005 (.1 2) m ax. .098 (2. 50) .110 ( 2.80 ) .141 (3. 60) . 0 3 7 ( 0 . 9 5 ) . 0 5 3 ( 1 . 3 5 ) . 0 0 8 ( 0 . 2 0 ) m a x . . 0 5 5 ( 1 . 4 0 ) . 0 7 1 ( 1 . 8 0 ) . 0 1 9 ( 0 . 5 0 ) . 0 2 8 ( 0 . 7 0 ) dim en sio ns i n in che s an d (m illim ete rs) s o d - 1 2 3 mds0208001b page 1 c c c/w note 1: thermal resistance from junction to ambient and junction to to lead p .c.b. mounted on 0.2 x 0.2 copper pad areas 206 150 -55 to +125 -55 to +125
rating and characteristic cur ves (CDBW0520-0540) fig. 1 - rev erse ch aract eristi cs 0.1 1 reverse voltage (v) r e v e r s e c u r r e n t ( u a ) fig. 4 - curren t de rating curve mounting on glass epoxy pcbs 0.1 0.2 0.3 0.4 0.5 0.6 0 25 50 75 100 125 150 a v e r a g e f o r w a r d c u r r e n t ( a ) smd schottky barrier diodes smd schottky barrier diodes www.com chip.co m.tw c o m c h ip c o m c h ip 1000 0.01 10 100 fig. 2 - rev erse ch aract eristi cs r e v e r s e c u r r e n t ( u a ) reverse voltage (v) 10000 1000 0 5 1 0 1 5 20 25 0 5 1 0 1 5 20 25 fig. 3 - cap acita nce bet ween termin als char acter istics rev erse vo ltag e (v) c a p a c i t a n c e b e t w e e n t e r m i n a l s ( p f ) 0 50 100 150 200 5 10 15 2 0 25 f o r w a r d c u r r e n t ( a ) forw ard vol tage ( v) fig. 3 - forw ard cha racte ristic s 0.1 0.2 0.3 0.4 0.5 0.01 0.1 1 10 mds0208001b page 2 tj=25 c tj=75 c tj=25 c ambient t emperature ( c) tj=100 c tj=100 c
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